WS1A3640
39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
Product Specifications
- Part Number
- WS1A3640
- Description
- 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
- Min Frequency (MHz)
- 3300
- Max Frequency(MHz)
- 3800
- P3dB Output Power(W)
- 60
- Gain(dB)
- 13.5
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Gate bias supplies for main and peaking sub-amplifiers from either side of the device
- GaN-on-SiC technology
- Integrated harmonic terminations
- Pb-free and RoHS compliant
- Recommended driver is the WSGPA01