Nitronex News

Nitronex Develops 48V Power Transistor Product Family
Addition of both ceramic and plastic 48V power transistors extends capabilities...

Nitronex Qualifies the Rugged and Reliable NPT1015 Transistor
Nitronex updates design process to create industry's toughest transistor...

Nitronex Welcomes New Vice President of Engineering
Mr. Runton has almost 20 years of RF power semiconductor experience with six years in GaN specific product development, including design, assembly, qualification and packaging.

Gaas Labs Acquires Leader in Gallium Nitride RF Solutions Nitronex Corporation
Gaas Labs, LLC, a private investment fund targeting the communications semiconductor market led by industry veteran John Ocampo, announced today that it has acquired privately-held Nitronex Corporation.

 

 


 

Nitronex has shipped over 650,000 GaN-on-Si devices to military and commercial customers.
Nitronex is presently the only fully-qualified supplier of Gallium Nitride-on-Silicon (GaN-on-Si) power transistors and MMICs for RF and Microwave applications.

Rugged, Robust and Reliable
In 2006, Nitronex released the first GaN qualification report to the industry.  Since then, Nitronex has continued to advance the technology and has announced a reliable 48V process and the ability to develop products that survive a 15:1 VSWR at all phase angles, while holding the device at 90ºC baseplate. Check out our reliability page for more information.

Process technology
Nitronex develops and manufactures a wide range of GaN-on-Si RF power transistors and MMICs for commercial and military markets.  Unlike digital CMOS, the silicon used by Nitronex has a high resistivity (10,000 Ω/cm) which provides excellent loss characteristics at RF and microwave frequencies.  Our current portfolio includes discrete transistor products ranging from DC-6 GHz, and 5W to over 200W of output power.  We also offer highly integrated standard and custom MMIC and hybrid products.

Nitronex Features 5W GaN PA MMIC and 60W Power Transistor

 

Leading Producer of
 GaN-on-Silicon RF Power Devices