GTRB204402FC
High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz
The GTRB204402FC/1 is a 350-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB204402FC
- Description
- High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz
- Min Frequency (MHz)
- 1930
- Max Frequency(MHz)
- 2020
- P3dB Output Power(W)
- 350
- Gain(dB)
- 16.3
- Efficiency(%)
- 58
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 350 W
- Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant