Click on the links below to access the Application Notes.
AN-002. NPT35050 Safe Operating Area (SOA)
The safe operating area of a transistor gives the user guidelines on where it is safe to bias the transistor for reliable long-term operation.
AN-003. Wideband Doherty Amplifier for WiMAX
This application note describes the operational theory of Doherty amplifiers and presents a reference design for a 2.5 - 2.7GHz, 6W symmetric Doherty based on the NPT25015.
AN-004. VSWR Testing of NPTB00050
Robustness to output mismatch is a key design parameter in many amplifier applications. Nitronex's GaN HEMTs are inherently robust to output mismatch and may allow elimination of protection circuitry. Test results of the NPTB00050 operated at P3dB and subjected to 10:1 and 20:1 VSWR conditions and flange temperature up to 90o C are presented, showing excellent ability to withstand mismatches.
2.5-2.7 GHz 20W Doherty Amplifier
for WiMAX Applications Using the NPT25100
This application note describes the operational theory and characterization of a Doherty amplifier reference circuit that incorporates two Nitronex NPT25100 GaN transistors.
Die Handling and Storage
This application note provides guidelines to assist customers in handling and storing Nitronex GaN die in order to achieve a reliable design.
This application note describes Nitronex's burn-in process, its effects and how customers can perform burn-in on die products, if needed.
This application note describes procedures that have been successfully used by Nitronex in engineering and production environments and provides guidelines for our die customers.
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be directed to our GaN Essentials collection of application notes