Click on the links below to access the Application Notes.
AN-002. NPT35050 Safe Operating Area (SOA)
The safe operating area of a transistor gives the user guidelines on where
it is safe to bias the transistor for reliable long-term operation.
AN-003. Wideband Doherty
Amplifier for WiMAX
This application note describes the operational theory of Doherty amplifiers
and presents a reference design for a 2.5 - 2.7GHz, 6W symmetric Doherty
based on the NPT25015.
AN-004. VSWR
Testing of NPTB00050
Robustness to output mismatch is a key design parameter in many amplifier
applications. Nitronex's GaN HEMTs are inherently robust to output mismatch
and may allow elimination of protection circuitry. Test results of the
NPTB00050 operated at P3dB and subjected to 10:1 and 20:1 VSWR conditions
and flange temperature up to 90o C are presented, showing
excellent ability to withstand mismatches.
AN-005.
2.5-2.7 GHz 20W Doherty Amplifier
for WiMAX Applications Using the NPT25100
This application note describes the operational theory and characterization
of a Doherty amplifier reference circuit that incorporates two Nitronex
NPT25100 GaN transistors.
AN-006.
Die Handling and Storage
This application note provides guidelines to assist customers in
handling and storing Nitronex GaN die in order to achieve a reliable design.
AN-007.
Device Burn-In
This application note describes Nitronex's burn-in process, its effects and
how customers can perform burn-in on die products, if needed.
AN-008.
Die Level
Assembly
This application note describes procedures that have been successfully used
by Nitronex in engineering and production environments and provides
guidelines for our die customers.
For applications support, please send an e-mail to applications@nitronex.com.
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be directed to our GaN Essentials collection of application notes